Si4370DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel 1
30
Channel-2
Channel 2
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.022 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
I
D
(A)
7.5
6.5
7.5
6.5
FEATURES
D
D
D
D
LITTLE FOOTr
Plus
Schottky
Si4830DY Pin Compatible
PWM Optimized
100% R
g
Tested
APPLICATIONS
D
Asymmetrical Buck-Boost DC/DC Converter
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V @ 1.0 A
I
F
(A)
2.0
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
Ordering Information: Si4370DY—E3 (Lead Free)
Si4370DY-T1—E3 (Lead Free with Tape and Reel)
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10 secs
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Steady State
Channel-1
30
"20
5.7
4.6
30
0.9
1.1
0.7
−55
to 150
W
_C
A
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Channel-1
"20
7.5
6.0
1.7
2.0
1.3
Channel-2
"12
Channel-2
"12
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
www.vishay.com
t
v
10 sec
Steady-State
Steady-State
Schottky
Typ
53
93
35
Symbol
R
thJA
R
thJF
Typ
52
93
35
Max
62.5
110
40
Max
62.5
110
40
Unit
_C/W
C/W
1
VISHAY [ VISHAY TELEFUNKEN ]
