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SI4410DY 参数 Datasheet PDF下载

SI4410DY图片预览
型号: SI4410DY
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V (D -S )的MOSFET [N-Channel 30-V (D-S) MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 4 页 / 57 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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Si4410DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
D
TrenchFETr Power MOSFET
I
D
(A)
10
8
r
DS(on)
(W)
0.0135 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4410DY-REVA
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
8
7
6
5
D
D
D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
10
8
50
2.3
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
Symbol
R
thJA
R
thJF
Limit
50
22
Unit
_C/W
1