Si4416DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
D
TrenchFETr Power MOSFET
I
D
(A)
9.0
7.3
r
DS(on)
(W)
0.018 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4416DY
Si4416DY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
G
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"20
9.0
Steady State
Unit
V
6.9
5.6
50
A
1.2
1.4
0.9
- 55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
7.5
2.1
2.5
1.6
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72266
S-31062—Rev. E, 26-May-03
www.vishay.com
Steady-State
Steady-State
R
thJA
R
thJF
Symbol
Typ
40
72
16
Max
50
90
20
Unit
_C/W
C/W
1
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