Specification Comparison
Vishay Siliconix
Si4420BDY vs. Si4420DY
Description:
Package:
Pin Out:
N-Channel, 30-V (D-S) MOSFET
SO-8
Identical
Part Number Replacements:
Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3
Si4420BDY-T1-E3 Replaces Si4420DY-T1
Summary of Performance:
The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4420BDY
Si4420DY
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(MOSFET Diode Conduction)
Power Dissipation
T
A
= 25°C
T
A
= 70°C
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
& T
stg
R
thJA
30
+20
13.5
10.8
50
2.3
2.5
1.6
-55 to 150
50
30
+20
13.5
10.8
50
2.7
3.0
1.9
-55 to 150
42
W
°C
°C/W
A
V
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Qg
Qgt
Qgs
Qgd
Rg
t
d(on)
t
r
t
d(off)
t
f
t
rr
30
0.007
0.009
50
0.75
16
31
6.6
4.0
1.0
15
11
40
12
30
1.1
25
50
0.0085
0.011
1.0
3.0
+100
1
30
0.0075
0.010
50
NS
29
58
12
9.5
2.1
22
13
82
30
50
1.1
45
90
0.009
0.013
1.0
2.0
3.0
+100
1
V
nA
µA
A
Ω
S
V
Symbol
Min
Si4420BDY
Typ
Max
Min
Si4420DY
Typ
Max
Unit
Dynamic
Total Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
nC
Ω
0.5
1.5
25
18
60
20
50
0.5
4.6
35
20
125
45
75
Switching
Turn-On Time*
Turn-Off Time*
Source-Drain Reverse Recovery Time
NS denotes parameter not specified
ns
Document Number 74060
06-May-05
www.vishay.com
VISHAY [ VISHAY TELEFUNKEN ]
