欢迎访问ic37.com |
会员登录 免费注册
发布采购

SI4931DY 参数 Datasheet PDF下载

SI4931DY图片预览
型号: SI4931DY
PDF下载: 下载PDF文件 查看货源
内容描述: 双P通道12 -V (D -S )的MOSFET [Dual P-Channel 12-V (D-S) MOSFET]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 5 页 / 71 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号SI4931DY的Datasheet PDF文件第2页浏览型号SI4931DY的Datasheet PDF文件第3页浏览型号SI4931DY的Datasheet PDF文件第4页浏览型号SI4931DY的Datasheet PDF文件第5页  
Si4931DY
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.018 @ V
GS
=
−4.5
V
−12
0.022 @ V
GS
=
−2.5
V
0.028 @ V
GS
=
−1.8
V
FEATURES
I
D
(A)
−8.9
−8.1
−3.6
D
TrenchFETr Power MOSFET
D
Advanced High Cell Density Process
APPLICATIONS
D
Load Switching
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4931DY—E3
Si4931DY-T1—E3 (with Tape and Reel)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−12
"8
Unit
V
−8.9
−7.1
−30
−1.7
2.0
1.3
−55
to 150
−6.7
−5.4
A
−0.9
1.1
0.7
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72379
S-32411—Rev. B, 24-Nov-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
46
80
24
Maximum
62.5
110
32
Unit
_C/W
C/W
1