Si4933DY
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.014 @ V
GS
= -4.5 V
-12
0.017 @ V
GS
= -2.5 V
0.022 @ V
GS
= -1.8 V
FEATURES
I
D
(A)
-9.8
- 8.9
- 7.8
D
TrenchFETr Power MOSFET
D
Advanced High Cell Density Process
APPLICATIONS
D
Load Switching
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
-1.7
2.0
1.3
-55 to 150
-7.8
-30
-0.9
1.1
0.7
W
_C
-5.9
A
Symbol
V
DS
V
GS
10 secs
Steady State
-12
"8
Unit
V
- 9.8
-7.4
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
C/W
1
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