Si6543DQ
Vishay Siliconix
Dual N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
r
DS(on)
(W)
0.065 @ V
GS
= 10 V
0.095 @ V
GS
= 4.5 V
I
D
(A)
"3.9
"3.1
"2.5
"1.8
P-Channel
–30
0.085 @ V
GS
= –10 V
0.19 @ V
GS
= –4.5 V
D
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6543DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
"20
"3.9
"3.1
"20
1.25
1.0
P-Channel
–30
"20
"2.5
"2.1
"20
–1.25
Unit
V
A
W
0.64
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
thJA
N- or P-Channel
125
Unit
_C/W
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70181
S-49534—Rev. C, 06-Oct-97
www.vishay.com
S
FaxBack 408-970-5600
2-1
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