Si7447DP
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
-30
FEATURES
I
D
(A)
-24
r
DS(on)
(W)
0.006 @ V
GS
= -10 V
D
TrenchFETr Power MOSFETS
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
PowerPAKt SO-8
S
6.15 mm
S
1
2
3
S
S
5.15 mm
G
G
4
D
8
7
6
5
D
D
D
D
Bottom View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
-4.5
5.4
3.4
-55 to 150
- 19
-60
-1.6
1.9
1.2
W
_C
-1 1
A
Symbol
V
DS
V
GS
10 secs
Steady State
-30
"25
Unit
V
-24
-14
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71970
S-21475—Rev. A, 26-Aug-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
C/W
1
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