Si7478DP
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(Ω)
0.0075 @ V
GS
= 10 V
0.0088 @ V
GS
= 4.5 V
I
D
(A)
20
18.5
FEATURES
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07-mm Profile
• 100 % R
g
Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK SO-8
6.15 mm
S
1
2
3
S
S
5.15 mm
• Automotive Such As:
- High-Side Switch
- Motor Drives
- 12-V Boardnet
D
G
4
D
8
7
6
5
D
D
D
G
Bottom View
Ordering Information:
Si7478DP-T1—E3 (Lead (Pb)-Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150°C)
a
Pulsed Drain Current
Continuous Source Current (Diode
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
Conduction)
a
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
T
A
= 25°C
T
A
= 70°C
P
D
T
J
, T
stg
10 secs
60
±20
20
16
60
4.5
35
61
5.4
3.4
–55 to 150
260
1.9
1.2
1.6
mJ
W
°C
15
12
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (
The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
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