IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
52
13
18
Single
D
FEATURES
500
0.52
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
and
Avalanche Voltage and current
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TO-220
G
APPLICABLE OFF LINE SMPS TOPOLOGIES
S
G
D
S
N-Channel
MOSFET
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB11N50APbF
SiHFB11N50A-E3
IRFB11N50A
SiHFB11N50A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
for 10 s
6-32 or M3 screw
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
11
7.0
44
1.3
275
11
17
170
6.9
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 4.5 mH, R
G
= 25
Ω,
I
AS
= 11 A (see fig. 12).
c. I
SD
≤
11 A, dI/dt
≤
140 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
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