SM15T Series
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• 1500 W peak pulse power capability with a
10/1000 µs waveform
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATION NOTES
A 1500 W (SMC) device is normally selected when the
threat of transients is from lightning induced transients,
conducted via external leads or I/O lines. It is also used
to protect against switching transients induced by
large coils or industrial motors. Source impedance at
component level in a system is usually high enough to
limit the current within the peak pulse current (I
PP
)
rating of this series. In an overstress condition, the
failure mode is a short circuit.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
DO-214AB (SMC)
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 220 V
1500 W
6.5 W
200 A
150 °C
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
SM15T12CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)(2)
(Fig. 1)
Peak power pulse current with a 10/1000 µs
waveform
(1)
(Fig. 3)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
- 65 to + 150
UNIT
W
A
W
A
°C
Power dissipation on infinite heatsink T
A
= 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
Document Number: 88380
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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