New Product
SS10P3C & SS10P4C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
12
Resistive or Inductive Load
1000
Instantaneous Reverse Current (mA)
Average Forward Current (A)
10
100
10
T
A
= 150 °C
8
T
A
= 125 °C
1
6
4
T
L
measured
at the Cathode Band Terminal
0.1
T
A
= 25 °C
0.01
2
0
0
25
50
75
100
125
150
175
0.001
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics Per Diode
2.5
D = 0.3
D = 0.2
2.0
D = 0.1
D = 1.0
1.5
D = 0.5 D = 0.8
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
Average Power Loss (W)
1000
1.0
T
0.5
D = t
p
/T
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
t
p
100
0.1
1
10
100
Average Forward Current (A)
Reverse
Voltage
(V)
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
T
A
= 150 °C
10
T
A
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
T
A
= 25 °C
10
0.1
Junction to Ambient
1
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 89035
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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