SS1H9 & SS1H10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
1.0 A
90 V to 100 V
50 A
0.62 V
1.0 µA
175 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 kHz
Storage temperature range
Maximum operating temperature
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
T
STG
T
J
SYMBOL
SS1H9
S9
90
90
90
1.0
50
1.0
- 65 to + 175
175
SS1H10
S10
100
100
100
V
V
V
A
A
A
°C
°C
UNIT
Document Number: 88747
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
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