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SS8P3CL 参数 Datasheet PDF下载

SS8P3CL图片预览
型号: SS8P3CL
PDF下载: 下载PDF文件 查看货源
内容描述: 高电流密度表面贴装肖特基整流器 [High Current Density Surface Mount Schottky Barrier Rectifier]
分类和应用:
文件页数/大小: 5 页 / 97 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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New Product
SS8P2CL, SS8P3CL
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifier
eSMP
K
TM
FEATURES
Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 4 A
T
J
max.
2 x 4.0 A
20 V, 30 V
120 A
20 mJ
0.41 V
150 °C
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters and polarity protection
application.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
total device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at 25 °C, I
AS
= 2 A per diode
Operating junction and storage temperature range
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
V
RRM
SYMBOL
SS8P2CL
S82C
20
8.0
4.0
120
20
- 55 to + 150
A
mJ
°C
SS8P3CL
S83C
30
V
A
UNIT
Document Number: 89030
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000