SUD40N08-16
Vishay Siliconix
N-Channel 80-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
80
FEATURES
I
D
(A)
40
r
DS(on)
(W)
0.016 @ V
GS
= 10 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
80
"20
40
30
60
40
40
80
136
b
3a
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71323
S-40272—Rev. C, 23-Feb-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
C/W
1
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