SUD50N03-12P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
D
TrenchFETr Power MOSFET
I
D
(A)
a
17.5
14.5
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.0175 @ V
GS
= 4.5 V
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Order Number:
SUD50N03-12P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
"20
17.5
12.4
40
5
30
45
46.8
6.5
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 72267
S-31875—Rev. A, 15-Sep-03
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
2.6
Maximum
23
50
3.2
Unit
_C/W
C/W
1
VISHAY [ VISHAY TELEFUNKEN ]
