SUV90N06-05
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
FEATURES
r
DS(on)
(W)
I
D
(A)
90
a
0.0052 @ V
GS
= 10 V
0.0072 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFETS
D
200_C Junction Temperature
D
PWM Optimized
APPLICATIONS
D
Isolated DC/DC Converters
- Primary-Side Switch
D
Automotive
- Fan Motors
- 12-V Boardnet
- Motor Drives
TO-262
D
1
2 3
G
G
D S
S
Top View
SUV90N06-05
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
60
"20
90
a
90
a
240
75
280
350
c
4.3
- 55 to 200
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72112
S-03079—Rev. A, 03-Feb-03
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
0.5
Unit
_C/W
_
1
VISHAY [ VISHAY TELEFUNKEN ]
