T..RIA Series
Vishay High Power Products
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
t = 8.3 ms
I
TSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
V
FM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
70
80
1310
1370
1100
Sine half wave,
initial T
J
= T
J
maximum
1150
8550
7800
6050
5520
70
110
1660
1740
1400
1460
13 860
12 650
9800
8950
70
141
1780
1870
A
1500
1570
15 900
14 500
11 250
10 270
A
2
√s
A
2
s
°C
A
T50RIA T70RIA T90RIA UNITS
50
70
90
A
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
maximum
(I >
π
x I
T(AV)
), T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
maximum
(I >
π
x I
T(AV)
), T
J
maximum
I
TM
=
π
x I
T(AV)
, T
J
= 25 °C, t
p
= 400 µs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
I
TM
=
π
x I
T(AV)
, T
J
= 25 °C, t
p
= 400 µs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
Anode supply = 6 V, initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 6 V, resistive load = 10
Ω
Gate pulse: 10 V, 100 µs, T
J
= 25 °C
85 500 138 500 159 100
0.97
1.13
4.1
3.3
1.60
1.60
200
400
0.77
0.88
3.6
3.2
1.55
1.55
200
400
0.78
V
0.88
2.9
mΩ
2.6
1.55
1.55
200
mA
400
V
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gd
t
rr
t
q
TEST CONDITIONS
T
J
= 25 °C, V
d
= 50 % V
DRM
, I
TM
= 50 A
I
g
= 500 mA, t
r
≤
0.5, t
p
≥
6 µs
T
J
= 125 °C, I
TM
= 50 A, t
p
= 300 µs, dI/dt = 10 A/µs
T
J
= T
J
maximum, I
TM
= 50 A, t
p
= 300 µs
-dI/dt = 15 A/µs, V
R
= 100 V, linear to 80 % V
DRM
VALUES
0.9
3
110
µs
UNITS
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93756
Revision: 03-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
