VO3120
Vishay Semiconductors
2.5 A Output Current IGBT and
MOSFET Driver
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
45
mW
TA
Output power dissipation
Pdiss
Ptot
250
285
125
125
mW
mW
°C
Total power dissipation
θCA
Maximum LED junction temperature
Maximum output die junction temperature
Tjmax.
Tjmax.
Package
TC
°C
θEC
θDC
Thermal resistance, junction emitter to
board
JEB
JEC
JDB
169
192
82
°C/W
°C/W
°C/W
θDE
TJE
TJD
Thermal resistance, junction emitter to case
θDB
Thermal resistance, junction detector to
board
θEB
TB
Thermal resistance, junction detector to
case
JDC
80
°C/W
θBA
Thermal resistance, junction emitter to
junction detector
JED
CA
200
°C/W
°C/W
19996
TA
Thermal resistance, case to ambient
2645
Note
•
The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note.
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
O = (VCC - 4 V)
O = (VCC - 15 V)
O = (VEE + 2.5 V)
O = (VEE + 15 V)
O = - 100 mA
O = 100 mA
SYMBOL
MIN.
0.5
TYP.
MAX.
UNIT
A
(1)
V
IOH
High level output current
(2)
V
IOH
2.5
A
(1)
V
IOL
0.5
A
Low level output current
(2)
V
IOL
2.5
A
(3)
High level output voltage
Low level output voltage
High level supply current
I
VOH
VCC - 4
V
I
VOL
0.2
0.5
2.5
V
Output open, IF = 7 mA to 16 mA
ICCH
mA
Output open,
VF = - 3 V to + 0.8 V
Low level supply current
ICCL
2.5
5
mA
Threshold input current low to high
Threshold input voltage high to low
Input forward voltage
IO = 0 mA, VO > 5 V
IFLH
VFHL
mA
0.8
1
V
IF = 10 mA
IF = 10 mA
VF
1.6
V
Temperature coefficient of forward voltage
Input reverse breakdown voltage
Input capacitance
VF/TA
BVR
- 1.4
60
mV/°C
I
R = 10 μA
5
V
pF
V
f = 1 MHz, VF = 0 V
VO 5 V
CIN
VUVLO +
VUVLO -
UVLOHYS
11
13.5
12
UVLO threshold
IF = 10 mA
9.5
V
UVLO hysteresis
1.6
V
Notes
•
Minimum and maximum values were tested over recommended operating conditions (TA = - 40 °C to 110 °C, IF(ON) = 7 mA to 16 mA,
F(OFF) = - 3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are
V
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at Tamb = 25 °C and with VCC - VEE = 32 V.
Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.
(1)
(2)
Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
I
O peak minimum = 2.5 A.
(3)
In this test VOH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero A. Maximum
pulse width = 1 ms, maximum duty cycle = 20 %.
Document Number: 81314
Rev. 1.3, 15-Mar-11
For technical questions, contact: optocoupleranswers@vishay.com
This datasheet is subject to change without notice.
www.vishay.com
3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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