VQ1001J/P
Vishay Siliconix
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VQ1001J
VQ1001P
V
(BR)DSS
Min (V)
30
r
DS(on)
Max (W)
1 @ V
GS
= 12 V
1 @ V
GS
= 12 V
V
GS(th)
(V)
0.8 to 2.5
0.8 to 2.5
I
D
(A)
0.83
0.53
FEATURES
D
D
D
D
D
Low On-Resistance: 0.85
W
Low Threshold: 1.4 V
Low Input Capacitance: 38 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
Dual-In-Line
D
1
N
S
1
G
1
NC
G
2
N
S
2
D
2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
D
4
S
4
G
4
NC
G
3
S
3
D
3
N
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
VQ1001P
“S”
fllxxyy
N
Device Marking
Top View
VQ1001J
“S”
fllxxyy
Top View
Plastic: VQ1001J
Sidebraze: VQ1001P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
VQ1001J
VQ1001P
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Symbol
V
DS
V
GS
Single
30
"30
"20
0.83
0.53
3
1.3
0.52
96
Total Quad
Unit
V
A
2
0.8
62.5
–55 to 150
W
_C/W
_C
Power Dissipation (Single)
Thermal Resistance, Junction-to-Ambient (Single)
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70219
S-04279—Rev. D, 16-Jul-01
www.vishay.com
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