VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified according to JEDEC-JESD47
1
Cathode
3
Anode
1
Cathode
2
Anode
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-ETH3006-M3
VS-ETH3006FP-M3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220FP
30 A
600 V
2.65 V
27 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 131 °C
T
C
= 51 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
30
180
- 65 to 175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.4
0.02
50
20
8
MAX.
-
2.65
1.8
30
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93523
Revision: 18-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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