VSMY2850RG, VSMY2850G
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
FEATURES
VSMY2850RGX01
VSMY2850GX01
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength:
λ
p
= 850 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity:
ϕ
= ± 10°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2500X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
21725-3
DESCRIPTION
VSMY2850 series are infrared, 850 nm emitting diodes
based on GaAlAs surface emitter chip technology with
extreme high radiant intensities, high optical power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR illumination
PRODUCT SUMMARY
COMPONENT
VSMY2850RG
VSMY2850G
I
e
(mW/sr)
100
100
ϕ
(deg)
± 10
± 10
λ
P
(nm)
850
850
t
r
(ns)
10
10
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMY2850RG
VSMY2850G
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number: 83398
Rev. 1.0, 22-Dec-10
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
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