VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
VIS
Absolute Maximum Ratings
Parameter
Symbol
VT
Value
Unit
V
5V
-1.0 to + 7.0
Voltage on any pin relative to Vss
3.3V
-0.5 to + 4.6
-1.0 to + 7.0
5V
V
Supply voltage relative to Vss
VCC
3.3V
-0.5 to + 4.6
50
Short circuit output current
Power dissipation
IOUT
PD
TOPT
TSTG
mA
W
1.0
Operating temperature
Storage temperature
0 to + 70
-55 to + 125
°C
°C
Recommended DC Operating Conditions
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
Min
Typ
5.0
Max
Min
Typ
3.3
Max
Supply Voltage
VCC
VIH
VIL
4.5
5.5
VCC + 1.0
0.8
3.15
2.0
3.6
VCC + 0.3
0.8
V
V
V
Input High Voltage, all inputs
Input Low Voltage, all inputs
2.4
-
-
-
-
-1.0
-0.3
Capacitance
Ta = 25°C, V
= 5V ±10 % or 3.3V (+10%,-5%), f = 1MHz
CC
Parameter
Symbol
CI1
Typ
Max
Unit
pF
Note
1
Input capacitance (Address)
5
7
7
-
Input capacitance (RAS, CAS, OE, WE)
CI2
pF
pF
1
-
Output capacitance
(Data-in, Data-out)
CI/O
1, 2
-
Note: 1. Capacitance measured with effective capacitance measuring method.
2. RAS, CAS = V to disable Dout.
IH
Document:1G5-0162
Rev.1
Page5
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
