VIS
Absolute Maximum Ratings
VG26(V)(S)17405FJ
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Parameter
5V
Voltage on any pin relative to Vss
3.3V
5V
Supply voltage relative to Vss
3.3V
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
T
Value
-1.0 to + 7.0
-0.5 to + 4.6
-1.0 to + 7.0
Unit
V
V
V
CC
-0.5 to + 4.6
I
OUT
P
D
T
OPT
T
STG
50
1.0
0 to + 70
-55 to + 125
mA
W
°C
°C
Recommended DC Operating Conditions
Parameter/Condition
Symbol
Min
5 Volt Version
Typ
5.0
Max
5.5
Min
3.3 Volt Version
Typ
3.3
Max
3.6
Unit
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
V
CC
V
IH
V
IL
4.5
2.4
-1.0
3.15
2.0
-0.3
V
V
V
- V
CC
+ 1.0
-
0.8
- V
CC
+ 0.3
-
0.8
Capacitance
Ta = 25°C, V
CC
= 5V
±
10 %
or 3.3V (
+10%,-5%), f = 1MHz
Parameter
Input capacitance (Address)
Input capacitance (RAS, CAS, OE, WE)
Output capacitance
(Data-in, Data-out)
Symbol
C
I1
C
I2
C
I/O
Typ
-
-
-
Max
5
7
7
Unit
pF
pF
pF
Note
1
1
1, 2
Note: 1. Capacitance measured with effective capacitance measuring method.
2. RAS, CAS = V
IH
to disable Dout.
Document:1G5-0162
Rev.1
Page 5
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
