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2N7002K 参数 Datasheet PDF下载

2N7002K图片预览
型号: 2N7002K
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用: 晶体晶体管开关光电二极管PC
文件页数/大小: 6 页 / 813 K
品牌: WEITRON [ WEITRON TECHNOLOGY ]
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2N7002K
Switching
Turn-on Delay Time
2
V
DS
=30V,V
GS
=10V,I
D
=600mA,R
D
=52Ω,R
G
=3.3Ω
Rise Time
V
DS
=30V,V
GS
=10V,I
D
=600mA,R
D
=52Ω,R
G
=3.3Ω
Turn-off Delay Time
V
DS
=30V,V
GS
=10V,I
D
=600mA,R
D
=52Ω,R
G
=3.3Ω
Fall Time
V
DS
=30V,V
GS
=10V,I
D
=600mA,R
D
=52Ω,R
G
=3.3Ω
Total Gate Charge
2
V
DS
=50V,V
GS
=4.5V,I
D
=600mA
Gate-Source Charge
V
DS
=50V,V
GS
=4.5V,I
D
=600mA
Gate-Drain Change
V
DS
=50V,V
GS
=4.5V,I
D
=600mA
t
d
(on)
-
-
-
-
-
-
-
12
10
59
29
1
0.5
0.5
-
-
ns
t
d
(off )
-
-
1.6
-
-
nC
tr
tf
Q
g
Q
gs
Q
gd
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V, I
S
=200mA
V
SD
-
-
1.2
V
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width
300μs, duty cycle
2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
http:www.weitron.com.tw
WEITRON
3/6
21-Nov-06