MBT3904DW
Dual General Purpose Transistor
NPN+NPN Silicon
3
2
1
6 5
4
1
2
3
4
5
6
SOT-363(SC-88)
NPN+NPN
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation T
A
=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R
θ
JA
TJ,Tstg
Max
150
833
-55 to +150
Unit
mW
C/W
C
Device Marking
MBT3904DW=MA
Electrical Characteristics
Off C har acter istics
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Max
Unit
Characteristics
Collector-Emitter Breakdown Voltage
(2)
(I
C
=1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=10 uAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=10 uAdc, I
C
=0)
Base Cutoff Current (V
CE
=30 Vdc, V
EB
=3.0 Vdc)
Collector Cutoff Current (V
CE
=30Vdc, V
EB
=3.0Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width
<
300uS, Duty Cycle
<
2.0%
=
=
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
60
6.0
-
-
-
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
-
-
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