SS8050
NPN General Purpose Transistors
P b
Lead(Pb)-Free
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
MAXIMUM RATINGS
(T
A
=25˚C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation T
A
=25°C
Junction and Storage, Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
Value
40
25
5
1.5
1.0
-55 to +150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
=25˚C unless otherwise noted)
Characteristics
Collector-Base Breakdown Voltage
I
C
=100µA, I
E
=0
Collector-Emitter Breakdown Voltage
I
C
=0.1mA, I
B
=0
Emitter Base Breakdown Voltage
I
E
=100µA, I
C
=0
Collector cut-off current
V
CB
=40V, I
E
=0
Emitter cut-off current
V
CE
=20V, I
E
=0
Emitter cut-off current
V
EB
=5V, I
C
=0
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Min
40
25
5
-
-
-
Typ
-
-
-
-
-
-
Max
-
-
-
0.1
0.1
0.1
Unit
V
V
V
µA
µA
µA
WEITRON
http://www.weitron.com.tw
1/4
19-Jul-05
WEITRON [ WEITRON TECHNOLOGY ]
