SS8550
Plastic-Encapsulate Transistors
PNP Silicon
2
BASE
1
EMITTER
COLLECTOR
3
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation T
A
=25 C
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
SS8550
-25
-40
-5.0
-1.5
1.0
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
DEVICE MARKING
SS8550=SS8550D
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(1)
(IC= -0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc)
Emitter Cutoff Current(VEB = -5 Vdc, I C =0 Vdc)
1. Pulse Test: Pulse Width
<
300 us, Duty Cycle
<
2.0%
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
I EBO
Min
-25
-40
-5.0
-
-
Max
-
-
-
-0.1
-0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
WEITRON [ WEITRON TECHNOLOGY ]
