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AO4406A 参数 Datasheet PDF下载

AO4406A图片预览
型号: AO4406A
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道MOSFET [30V N-Channel MOSFET]
分类和应用:
文件页数/大小: 6 页 / 2580 K
品牌: WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
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万和兴电子有限公司 www.whxpcb.com
AO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
13A
< 11.5mΩ
< 15.5mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
D
Top View
D
D
D
Bottom View
D
G
S
G
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
30
±20
13
10.4
100
22
24
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 2: Nov. 2011
www.aosmd.com
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