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2N7002LT1 参数 Datasheet PDF下载

2N7002LT1图片预览
型号: 2N7002LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号MOSFET 115毫安, 60伏N沟道SOT- 23 [Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 4 页 / 261 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
2N7002LT1
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Weight:0.008g
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous
T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
50
µs)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
±115
±75
±800
Unit
V
dc
V
dc
mAdc
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
W
N - Channel
3
V
GS
V
GSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J,
T
stg
417
-55 to
+150
°C/W
°C
Unit
1
mW
mW/°C
2
R
θJA
P
D
°C/W
mW
mW/°C
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
W
1
2
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Gate
702
W
Source
= Device Code
= Work Week
ORDERING INFORMATION
Device
2N7002LT1
Marking
702
Shipping
3000 Tape & Reel