WILLAS
SOT-323 Plastic-Encapsulate Diodes
Features
SWITCHING DIODE
•
Batch process design, excellent power dissipation offers
FEATURES:
better reverse leakage current and thermal resistance.
Four types of
surface mounted application in order to
•
Low profile
packaging are available
optimize board space.
High speed. (trr=1.5ns Typ.)
•
Low power loss, high efficiency.
Suitable
current capability, low forward
layout
drop.
•
High
for high packing density
voltage
•
High surge capability.
High reliability.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for
planar chip, metal
suffix ”G”
•
Silicon epitaxial
packing code
silicon junction.
•
Lead-free parts meet
for packing
standards of
Halogen free product
environmental
code suffix “H”
Moisture Sensitivity Level 1
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MIL-STD-19500 /228
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
DAP202U
FM1200-M
Pb Free Product
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
MARKING: P
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Maximum Ratings @T
A
=25
℃
Ratings at 25℃ ambient
Peak reverse voltage
temperature unless otherwise specified.
V
RM
Dimensions in inches and (millimeters)
Parameter
RATINGS AND
Symbol
Limits
MAXIMUM
ELECTRICAL CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
DC reverse voltage
V
R
For capacitive load, derate current by 20%
Unit
V
V
16
60
42
60
1.0
30
40
120
MIN
18
80
56
80
10
100
70
100
80
80
Maximum (peak) forward current
RATINGS
Marking Code
Average forward current
I
FM
300
mA
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
D
V
RMS
Power dissipation
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
I
O
P
12
20
14
20
13
30
21
30
14
40
28
40
15
100
50
mA
115
150
120
200
140
200
200
35
50
150
mW
105
℃
150
℃
Vo
Vol
Maximum DC Blocking Voltage
Junction temperature
T
j
V
DC
T
I
O
stg
I
FSM
Vol
Maximum
temperature
Storage
Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
-55-150
Am
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Parameter
Operating Temperature Range
Storage Temperature Range
Reverse breakdown voltage
CHARACTERISTICS
Reverse voltage leakage current
Am
C
Symbol
J
T
J
TSTG
(BR)
V
-55 to +125
Test
conditions
MAX
℃/
-55 to +150
UNIT
V
0.9
0.92
PF
℃
I
R
= 100
μ
A
R
-
65
to +175
80
℃
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V =70V
0.1
μA
I
V
F
I
R
R
0.50
0.70
0.85
Vo
Maximum Average Reverse Current at @T A=25℃
Forward voltage
@T A=125℃
V
F
C
D
t
rr
I
F
=100mA
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
0.5
10
1.2
3.5
4
V
pF
ns
mA
NOTES:
Diode
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
capacitance
2-
Reverse recovery time
Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
