RoHS
MMBT9012LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
1W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
1.
3
1
2
Complement to 9013G
Collector Current :Ic=-500mA
High Total Power Dissipation Pc=225mW
2.9
1.9
0.95
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
Ic
T
j
P
D
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Breakdown Voltage#
Collector-Emitter Saturation Voltage
W
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
_
_
#
Pulse Test: Pulse Width
<
300uS Duty cycle
<
2%
DEVICE MARKING:
9012=J6
J
E
E
C
E
L
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
R
T
T
stg
H
FE1
H
FE2
V
CE(sat)
V
BE(sat)
V
BE(on)
O
N
C
I
Rating
-40
-20
-5
-500
225
150
-55~150
V
V
V
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
Unit:mm
D
T
0.95
(Ta=25 C)
o
Unit
V
V
V
mA
mW
O
O
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
-40
-20
-5
-100
-100
64
30
-0.18 -0.6
-0.95 -1.2
-0.6 -0.67 -0.7
o
Condition
I
C
=-100 A I
E
=0
I
C
=-1mA I
B
=0
I
E
=-100 A I
C
=0
V
CB
=-25V, V
C
=0
V
CB
=-3V, I
C
=0
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-500mA
nA
nA
120
300
V
V
V
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
C
e
=-1V, I
C
=-10mA
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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