WTE
POWER SEMICONDUCTORS
S20D30C – S20D60C
Pb
20A DUAL SCHOTTKY BARRIER RECTIFIER
Features
!
!
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Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
S
High Surge Current Capability
Plastic Material has UL Flammability
R
Classification 94V-O
L
N
M
A
B
H
TO-3P
Dim
Min
Max
3.20
3.50
A
4.70
5.30
B
—
23.00
C
19.00
—
D
2.80
3.20
E
0.45
0.85
G
—
16.20
H
1.70
2.70
J
3.15 Ø
3.65 Ø
K
—
4.50
L
5.25
5.65
M
1.10
1.40
N
—
2.50
P
11.70
12.70
R
5.00
6.00
S
All Dimensions in mm
J
K
PIN1
2
3
P
Mechanical Data
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Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
PIN 1 -
+
Case, PIN 2
G
D
E
PIN 3 -
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S20D
30C
30
21
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
JC
T
j
, T
STG
S20D
35C
35
25
S20D
40C
40
28
20
250
0.55
1.0
50
S20D
45C
45
32
S20D
50C
50
35
S20D
60C
60
42
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
@I
F
= 10A
@T
A
= 25°C
@T
A
= 100°C
0.65
V
mA
pF
°C/W
°C
1100
1.5
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
S20D30C – S20D60C
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
