WTE
POWER SEMICONDUCTORS
S30D30C – S30D60C
Pb
30A DUAL SCHOTTKY BARRIER RECTIFIER
Features
!
!
!
!
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Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
S
High Surge Current Capability
Plastic Material has UL Flammability
R
Classification 94V-O
L
N
M
A
B
H
TO-3P
Dim
Min
Max
3.20
3.50
A
4.70
5.30
B
—
23.00
C
19.00
—
D
2.80
3.20
E
0.45
0.85
G
—
16.20
H
1.70
2.70
J
3.15 Ø
3.65 Ø
K
—
4.50
L
5.25
5.65
M
1.10
1.40
N
—
2.50
P
11.70
12.70
R
5.00
6.00
S
All Dimensions in mm
J
K
PIN1
2
3
P
Mechanical Data
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Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
PIN 1 -
+
Case, PIN 2
G
D
E
PIN 3 -
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S30D
30C
30
21
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 95°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
JC
T
j
, T
STG
S30D
35C
35
25
S30D
40C
40
28
30
275
0.55
1.0
60
S30D
45C
45
32
S30D
50C
50
35
S30D
60C
60
42
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
@I
F
= 15A
@T
A
= 25°C
@T
A
= 100°C
0.65
V
mA
pF
°C/W
°C
1100
1.4
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
S30D30C – S30D60C
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
