WTE
POWER SEMICONDUCTORS
SB1020F – SB10100F
Pb
10A SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
C
Low Reverse Leakage Current
High Surge Current Capability
G
Plastic Material has UL Flammability
Classification 94V-O
D
F
P
I
H
L
B
ITO-220A
Dim
Min
Max
14.60
15.40
A
9.70
10.30
B
2.55
2.85
C
3.56
4.16
D
13.00
13.80
E
0.30
0.90
F
3.00 Ø
3.50 Ø
G
6.30
6.90
H
4.20
4.80
I
2.50
2.90
J
0.36
0.80
K
2.90
3.30
L
4.83
5.33
P
All Dimensions in mm
A
PIN1
3
Mechanical Data
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Case: ITO-220A, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
E
PIN 1 +
J
K
PIN 3 -
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
@I
F
= 10A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
SB
SB
SB
SB
SB
SB
SB
SB
1020F 1030F 1040F 1045F 1050F 1060F 1080F 10100F
20
14
30
21
40
28
45
32
10
50
35
60
42
80
56
100
70
Unit
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JC
T
j
, T
STG
0.55
150
0.75
0.5
50
700
4.0
-65 to +150
0.85
A
V
mA
pF
°C/W
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB1020F – SB10100F
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
