SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE
4
–
AUGUST 2003
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FMMT455
FMMT555
C
E
B
555
SOT23
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j:
T
stg
VALUE
-160
-150
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
50
100
10
MIN.
-160
-150
-5
-0.1
-10
-0.1
-0.3
-1
-1
MAX
UNIT
V
V
V
A
A
A
CONDITIONS.
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-140V
V
CB
=-140V, T
amb
=100°C
V
EB
=-4V
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
MHz
pF
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
V
V
300
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 131
ZETEX [ ZETEX SEMICONDUCTORS ]
