NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 1 Amp continuous current
* P
tot
= 800 mW
BC639
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
80
80
5
1
800
-55 to +150
TO92
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
MIN.
80
80
5
0.1
0.5
1.0
25
40
25
200
TYP.
MAX.
UNIT
V
V
V
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=30V
I
C
=500mA, I
B
=50mA*
IC=500mA,V
CE
=2V*
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
Collector Cut-Off Current I
CBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
V
CE(sat)
V
BE(on)
h
FE
V
V
160
MHz
f
T
I
C
=50mA, V
CE
=2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-18
ZETEX [ ZETEX SEMICONDUCTORS ]
