SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS –
BCX19 -
BCX19R -
BCX17
U1
U4
BCX19
COMPLEMENTARY TYPES -
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
TOT
T
j
:T
stg
VALUE
50
45
5
1000
500
100
200
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Cut-Off
Current
Emitter-Base Cut-Off
Current
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
SYMBOL
I
CBO
MIN.
TYP.
MAX. UNIT
100
200
10
nA
µ
A
CONDITIONS.
V
CB
=20V
V
CB
=20V, T
j
=150°C
V
EB
=5V
I
EBO
µ
A
V
BE
V
CE(sat)
1.2
620
V
mV
I
C
=500mA, V
CE
=1V*
I
C
=500mA, I
B
=50mA*
I
C
=10
0
mA, V
CE
=1V
I
C
=300mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
h
FE
100
70
40
200
600
Transition Frequency
f
T
MHz
I
C
=10mA, V
CE
=5V
f =35MHz
V
CB
=10V, f =1MHz
Output Capacitance
C
obo
5.0
pF
*Measured under pulsed conditions.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
