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ZTX325 参数 Datasheet PDF下载

ZTX325图片预览
型号: ZTX325
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面晶体管RF [NPN SILICON PLANAR RF TRANSISTOR]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管局域网
文件页数/大小: 2 页 / 55 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
 浏览型号ZTX325的Datasheet PDF文件第2页  
NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 – MARCH 94
FEATURES
* High f
T
, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
ZTX325
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Mean Collector Current (Averaged over 100
µ
s)
Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
AV
I
CM
P
tot
T
j
:T
stg
30
15
2.5
25
50
350
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mA
mW
°C
E
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Static Forward Current
Transfer Ratio
Transition Frequency
Capacitance, Collector
Depletion Layer
Capacitance, Emitter
Depletion Layer
Feedback Capacitance
Feedback Time Constant
SYMBOL
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
h
FE
f
T
C
TC
C
TE
-C
re
r
bb
’C
b
’
c
2.0
3-161
0.85
12
25
20
1.0
1.3
1.5
2.0
MIN.
15
5
10
10
150
125
GHz
GHz
pF
pF
pF
ps
TYP.
MAX. UNIT
V
V
nA
µ
A
CONDITIONS.
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=15V, I
E
=0
V
CE
=15V, V
BE
=0
I
C
=2mA, V
CE
=1V*
I
C
=25mA, V
CE
=1V*
I
C
=2mA, V
CE
=5V, f=400MHz
I
C
=25mA, V
CE
=5V, f=400MHz
V
CB
=10V, I
E
=I
e
=0, f=1MHz
VEB=0.5V, I
C
=I
c
=0, f=1MHz
V
CE
=5V, I
C
=2mA, f=1MHz
V
CB
=5V, -I
E
=2mA, f=10.7MHz