NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
ZTX415
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
260
100
6
0.1
10
0.1
0.5
0.9
15
25
25
40
8
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
TYP.
MAX.
260
100
6
500
60
680
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
A
mW
°C
-55 to +175
UNIT
V
V
V
µ
A
µ
A
µ
A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
I
C
=1mA
T
amb
= -55 to +175°C
I
C
=100
µ
A
I
E
=10
µ
A
V
CB
=180V
V
CB
=180V, T
amb
=100°C
V
EB
=4V
I
C
=10mA, I
B
=1mA*
I
C
=10mA, I
B
=1mA*
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, I
E
=0
f=100MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
I
SB
V
V
A
A
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Collector-Base
Capacitance
f
T
C
cb
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-171
ZETEX [ ZETEX SEMICONDUCTORS ]
