PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX549
ZTX549A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ZTX549A
Base-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
ZTX549
ZTX549A
V
BE(sat)
V
BE(on)
h
FE
70
80
40
100
150
-0.9
-0.85
200
130
80
160
200
3-191
300
500
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
-0.25
-0.50
MIN.
-35
-30
-5
-0.1
-10
-0.1
-0.50
-0.75
-0.30
-1.25
-1
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
-35
-30
-5
-2
-1
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
mW/ °C
°C
-55 to +200
UNIT
V
V
V
µ
A
µ
A
µ
A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA
I
E
=-100
µ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-100mA, I
B
=-1mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
V
V
V
V
V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZETEX [ ZETEX SEMICONDUCTORS ]
