NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX602
ZTX603
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX602
80
60
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX603
100
80
UNIT
V
V
V
A
A
W
mW/ °C
°C
E
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
80
60
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1
10
1.0
1.0
1.8
1.7
3-209
ZTX602
MIN.
100
80
10
ZTX603
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=60V
V
CB
=80V
V
CB
=60V,
T
amb
=100°C
V
CB
=80V,
T
amb
=100°C
V
EB
=8V
V
CES
=60V
V
CES
=80V
I
C
=400mA,
I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
MAX. MIN.
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.0
1.0
1.8
1.7
V
V
V
V
ZETEX [ ZETEX SEMICONDUCTORS ]
