NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent h
FE
characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* I
C
cont 3.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX718
ZTX618
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Practical Power Dissipation*
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
totp
P
tot
T
j
:T
stg
VALUE
20
20
5
10
3.5
500
1.5
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
W
°C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZETEX [ ZETEX SEMICONDUCTORS ]
