NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX650
ZTX651
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX651
MAX. MIN. TYP.
80
60
5
0.1
10
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
0.12
0.23
0.9
0.8
0.1
0.3
0.5
1.25
1
0.12
0.23
0.9
0.8
0.1
10
0.1
0.3
0.5
1.25
1
MAX.
ZTX650
60
45
5
6
2
1
5.7
E-Line
TO92 Compatible
ZTX651
80
60
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
ZTX650
MIN. TYP.
60
45
5
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
Collector-Base
V
(BR)CBO
Breakdown Voltage
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
CBO
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=45V
V
CB
=60V
V
CB
=45V,
T
amb
=100°C
V
CB
=60V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
V
V
V
V
3-219
ZETEX [ ZETEX SEMICONDUCTORS ]
