NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
APPLICATIONS
* Telephone dialler circuits
ZTX658
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
400
400
5
1
500
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
mA
W
mW/ °C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO)
V
(BR)EBO
I
CBO
I
CBO
400
400
5
100
100
100
0.3
0.25
0.5
0.9
0.9
50
50
40
3-229
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
ZETEX [ ZETEX SEMICONDUCTORS ]
