ZTX704
ZTX705
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
h
FE
ZTX704
MIN.
Static Forward
Current Transfer
Ratio
Transition
Frequency
Input Capacitance
Output Capacitance
Switching Times
3K
3K
3K
2K
MAX. MIN.
30K
3K
3K
3K
2K
ZTX705
MAX.
30K
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-100mA, V
CE
=-10V
f=20MHz
V
EB
=-0.5V, f=1MHz
V
CE
=-10V, f=1MHz
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
UNIT
CONDITIONS.
f
T
C
ibo
C
obo
t
on
t
off
160 Typical
90 Typical
15 Typical
0.6 Typical
0.8 Typical
160 Typical MHz
90 Typical
15 Typical
0.6 Typical
0.8 Typical
pF
pF
µ
s
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Maximum Power Dissipation (W)
1.0
R
5
= 100KΩ
R
5
= 1MΩ
0.8 R
5
=
∞
0.6
0.4
0.2
0
1
10
DC Conditions
R
5
= 22KΩ
100
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
amb
(
max
)
=
Power
(max ) −
Power
(
act
)
0.0057
+25°
C
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-251
ZETEX [ ZETEX SEMICONDUCTORS ]
