PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 4 JUNE 94
FEATURES
* 3.5 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* Excellent gain up to 10 Amps
* Spice model available
ZTX953
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
-140
-100
-6
-10
-3.5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
°C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
≤
1K
Ω
I
EBO
V
CE(sat)
-20
-80
-140
-250
-960
3-318
MIN.
-140
-140
-100
-6
TYP.
-170
-170
-120
-8
-50
-1
-50
-1
-10
-50
-100
-170
-330
-1100
MAX.
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100
µ
A
IC=-1
µ
A, RB
≤
1K
Ω
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
V
EB
=-6V
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-4A, I
B
=-400mA*
µ
A
µ
A
Base-Emitter
Saturation Voltage
V
BE(sat)
ZETEX [ ZETEX SEMICONDUCTORS ]
