N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=2Ω
ZVN2106A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
450
8
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
60
0.8
2.4
20
500
100
2
2
300
75
45
20
MAX. UNIT CONDITIONS.
V
V
nA
nA
µA
A
Ω
mS
pF
pF
pF
V
DS
=18 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60 V, V
GS
=0
V
DS
=48 V, V
GS
=0V,
T=125°C
(2)
V
DS
=18V, V
GS
=10V
V
GS
=10V,I
D
=1A
V
DS
=18V,I
D
=1A
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
3-361
ZETEX [ ZETEX SEMICONDUCTORS ]
