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ZVN4310A 参数 Datasheet PDF下载

ZVN4310A图片预览
型号: ZVN4310A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS FET [N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 55 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
 浏览型号ZVN4310A的Datasheet PDF文件第2页浏览型号ZVN4310A的Datasheet PDF文件第3页  
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 0.5Ω
* Spice model available
ZVN4310A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Practical Continuous Drain Current at
T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Practical Power Dissipation at T
amb
=25°C*
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DP
I
DM
V
GS
P
tot
P
totp
T
j
:T
stg
VALUE
100
0.9
1
12
±
20
850
1.13
-55 to +150
UNIT
V
A
A
A
V
mW
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
(1)(2)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
9
0.36
0.48
600
0.5
0.65
100
1
3
20
10
100
TYP.
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
A
mS
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
V
DS
=25V,I
D
=3A
g
fs
3-393