ZVP2110A
TYPICAL CHARACTERISTICS
-1.6
V
GS=
-20V
-16V
-12V
-10V
-9V
-8V
-0.8
-7V
-0.6
-6V
-0.4
-0.2
0
0
-10
-20
-30
-40
-5V
-4.5V
-4V
-4V
-3.5V
-50
-1.6
V
GS
=
-20V
-16V
-12V
-1.2
-1.0
-0.8
-7V
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-5V
-4.5V
-4V
-3.5V
-10
-6V
-10V
-9V
-8V
I
D(On)
- Drain Current (Amps)
I
D(On)
- Drain Current (Amps)
-1.4
-1.2
-1.0
-1.4
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
-8
-1.6
I
D(On)
Drain Current (Amps)
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-10
V
DS=-
10V
-6
-4
I
D=
-0.5A
-0.25A
0
0
-2
-4
-6
-8
-0.1A
-10
-2
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
R
DS(on)
-Drain Source On Resistance
(Ω)
Transfer Characteristics
100
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
V
GS=
-10V
I
D=
-0.375A
V
GS
=-4V
-5V
10
-7V
-10V
-20V
e
urc
-So
ain
Dr
Re
R
ce
an
ist
s
)
(on
DS
V
GS=
V
DS
I
D=
-1mA
Gate Thresh
old Voltage
V
GS(th)
1
10
100
1000
20 40 60 80 100 120 140 160 180°C
I
D-
Drain Current (mA)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-422
ZETEX [ ZETEX SEMICONDUCTORS ]
