ZXMN10A08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
100
20
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
Continuous Drain Current V
=10V; T =25°C (b)
I
1.5
1.2
1.21
GS
A
D
V
=10V; T =70°C (b)
GS
A
V
=10V; T =25°C (a)
GS
A
Pulsed Drain Current (c)
I
I
I
5.3
2.5
5.3
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
SM
Power Dissipation at T =25°C (a)
A
P
1.1
8.8
W
mW/°C
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
A
P
1.7
13.6
W
mW/°C
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
R
R
θJA
θJA
73
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 1 - MARCH 2002
2
ZETEX [ ZETEX SEMICONDUCTORS ]
